Investigation of the Effect of Rare Earth Elements in Hall Sensors Created Based on InSb

The article investigates the effect of rare earth elements on the electrophysical properties of Hall sensors based on indium antimonide (InSb). The InSb semiconductor is widely used in modern sensor technologies due to its high electron mobility, small forbidden energy band gap, and high magnetic sensitivity. These properties make InSb one of the promising materials for the production of high-precision Hall sensors. During the study, the electrical conductivity, Hall coefficient, carrier concentration, and mobility of InSb crystals doped with rare earth elements such as samarium (Sm) and dysprosium (Dy) were studied over a wide temperature range. It was found that rare earth elements reduce the number of structural defects in the crystal lattice, optimize additional scattering centers, and increase the relaxation time of electrons. As a result, the mobility of electrons increases, the conductivity improves, and the sensitivity of Hall sensors increases. The experimental results were compared with theoretical models and found to be in high agreement. The studies have shown that the addition of samarium in an amount of about 0.1 atomic percent significantly improves the main technical parameters of the Hall sensor. This indicates that InSb-based rare-earth-doped semiconductors are promising materials for automotive electronics, aerospace engineering, medical devices, and industrial automation.